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ROHM’s unsurpassed portfolio of power solutions for the industrial sector ranges from SiC MOSFETs - including our latest 4th Gen series offering superior performance and efficiency - and gate drivers to IPMs and discretes such as shunt resistors, allowing designers to select the ideal products to meet set needs. What’s more, our vertically integrated production system utilizing in-house production equipment provides superior reliability and ensures stable, long-term supply for 10 years or more required by the industrial sector.

ROHM’s unsurpassed portfolio of power solutions for the industrial sector ranges from SiC MOSFETs - including our latest 4th Gen series offering superior performance and efficiency - and gate drivers to IPMs and discretes such as shunt resistors, allowing designers to select the ideal products to meet set needs. What’s more, our vertically integrated production system utilizing in-house production equipment provides superior reliability and ensures stable, long-term supply for 10 years or more required by the industrial sector.

FEATURE PRODUCTS

ROHM’s SCT Series of 3rd-generation trench-gate type SiC MOSFETs are available 6 variants (650V/1200V). Features include approx. 50% lower ON-resistance than 2nd-generation planar types, making them ideal for large server power supplies, UPS systems, solar power converters, and electric vehicle charging stations requiring high efficiency.

A 4-pin package (TO-247-4L) is offered that maximizes switching performance and reduces switching loss by up to 35% over conventional 3-pin package types, contributing to lower power consumption in a variety of applications.

ROHM has recently released its 4th Gen MOSFETs that utilize an improved trench structure to deliver the industry's lowest ON resistance along with low switching loss by significantly reducing parasitic capacitance.

Article: Advantages of ROHM's 4th Gen SiC MOSFETs

Article: How a Driver Source Pin Improves Switching Efficiency

Press Release: 5th Gen P-channel MOSFETs Deliver Class-Leading Low ON Resistance

Press Release: 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance

Press Release: 4-Pin Package SiC MOSFETs Reduce Switching Loss, Contributing to Lower Power Consumption

Combine our SiC MOSFETs with our proprietary galvanically isolated gate drivers (BM6021x, BM61xx) specifically designed to drive SiC by integrating advanced features such as active Miller clamping, providing the ideal solution for applications requiring greater efficiency and switching speeds to improve performance while reducing both size and weight.

Digital Datasheet: BM6021x Series Gate Drivers

  Video: SiC Power and Gate Driver Solutions (link: https://youtu.be/bFJhX8fJt-E) 

ROHM IPMs (Intelligent Power Modules) integrate all components required for control, including the power device control IC and peripheral circuitry, into a single package. Both IGBT and MOS types are available, ideal for a variety of applications, including large home appliances, renewable energy, fans, and industrial motor drives, making the design process less complicated and improving system efficiency.

Press Release: New 600V IGBT IPMs Deliver Class-Leading Low Noise with Low Loss 

 

ROHM's GMR series of high power low ohmic shunt resistors combine high reliability with high power handling capability – ideal for industrial applications.

Article: High Power Low Ohmic Current Sense Resistors