SuperJunction MOSFET

ROHM utilizes super junction technology for its high voltage (600V+) power MOSFETs
The result is high-speed switching and low ON resistance, making it possible to reduce application loss. ROHM offers two types, one featuring low noise specifications and the other delivering high-speed switching, allowing customers to select the ideal solution based on application requirements. In addition, the PrestoMOS™ series achieves greater energy savings in motors and inverters - a drawback of super junction MOSFETs - by incorporating the industry’s fastest diode utilizing ROHM’s patented technology.

3 Advantages of ROHM Super Junction MOSFETs

  • ① Expanded lineup includes 3 series tailored to customer needs
  • ② Each series offered in a range of packages and ON resistances
  • ③ High quality and performance provided, along with a comprehensive support system

[NEW Series]
Contributes to lower power loss along with fewer man-hours and external parts required for noise suppression in devices equipped with small motors
600V Super Junction MOSFETs "PrestoMOS™" R60xxRNx Series

ROHM has added three new models, the R60xxRNx series, to its PrestoMOS™ lineup of 600V Super Junction MOSFETs. These devices are optimized for driving small motors in refrigerators, ventilation fans, and other applications where noise suppression is important.

PRODUCT NEWS

[NEW Series]
Built-In High-Speed Diode 600V Super Junction MOSFETs "PrestoMOS™" R60xxVNx Series

7 new models have been added to the PrestoMOS™ lineup (R60xxVNx series) of 600V Super Junction MOSFETs featuring the industry’s fastest reverse recovery time, making them ideal for high power applications ranging from power supply circuits in industrial equipment such as servers, EV chargers, and base stations to motor drive in white goods (i.e. air conditioners).

PRODUCT NEWS

[NEW Packge]
ROHM’s Compact SOT-223-3 600V MOSFETs Contribute to Smaller, Lower Profile Designs for Lighting Power Supplies, Pumps, and Motors

Compared to the conventional TO-252 package (6.60mm × 10.00mm × 2.30mm), ROHM’s new products reduce area and thickness by 31% and 27% - contributing to smaller, lower profile applications. At the same time, the same land pattern (footprint) as the TO-252 package can be used, enabling mounting on existing circuit boards without modification.

NEWS

ROHM Super Junction MOSFETs

●Wide range of breakdown voltages and ON-resistances

  500mΩ ≤ Ron typ. 500mΩ  > Ron typ.
  Active   Active  
800V R80xxKNx     R80xxKNx    
650V R65xxENx R65xxKNx     R65xxENx R65xxKNx   Under
Planning
600V R60xxENx R60xxKNx   Under
Development
R60xxENx R60xxKNx   R60xxYNx
R60xxJNx   R60xxRNx
(Low Noise)
R60xxJNx   R60xxVNx
  • :Low Noise Specifications
  • :High-Speed Switching Specifications
  • :Built-In High-Speed Diode
  • :Standard 4th Gen Type
  • :4th Gen Type with Built-In High-Speed Diode

●Select from 6 different package types

Series Package
Surface Mount Type Insertion Type
New SOT-223-3 TO-252
[DPAK]
LPTS
[D2PAK]
TO-220AB TO-220FM TO-3PF TO-247
SOT-223-3 TO-252[DPAK] LPTS [D2PAK] TO-220AB TO-220FM TO-3PF TO-247
800V   R80xxKND3     R80xxKNX   R80xxKNZ4
650V   R65xxEND3 R65xxENJ   R65xxENX R65xxENZ R65xxENZ4
  R65xxKND3 R65xxKNJ R65xxKNX3 R65xxKNX R65xxKNZ R65xxKNZ4
600V
Gen.4
New
  R60xxYND3   R60xxYNX3 R60xxYNX R60xxYNZ R60xxYNZ4
  R60xxVND3   R60xxVNX3 R60xxVNX R60xxVNZ R60xxVNZ4
600V
Gen.3
R600xEND4 R60xxEND3 R60xxENJ   R60xxENX R60xxENZ R60xxENZ4
R600xKND4 R60xxKND3 R60xxKNJ   R60xxKNX R60xxKNZ R60xxKNZ4
R600xJND4 R60xxJND3/RND3 R60xxJNJ   R60xxJNX R60xxJNZ R60xxJNZ4
  • :Low Noise Specifications
  • :High-Speed Switching Specifications
  • :Built-In High-Speed Diode
  • :Standard 4th Gen Type
  • :4th Gen Type with Built-In High-Speed Diode

●Widely adopted in a range of applications + Well-received in terms of characteristics, quality, and support

Widely adopted in a range of applications + Well-received in terms of characteristics, quality, and support

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Leaflet

What is PrestoMOS™?

PrestoMOS™ is a product in which the parasitic diode of the super junction MOSFET is sped up using proprietary patented technology.Due to its characteristic internal structure, the parasitic diode in a typical super junction MOSFET exhibits degraded recovery performance compared with a standard MOSFET. As a result, super junction MOSFETs could not be used in circuits that actively utilize the parasitic diode, such as inverters and bridge-type PFCs.
However, ROHM's PrestoMOS™ overcomes the drawback of super junction MOSFETs by speeding up the parasitic diode, contributing to significantly greater energy savings in applications utilizing bridge circuits and inverters for motor drive.

What is PrestoMOS™?

Following the trend in recent years towards greater energy savings, ROHM has been contributing to increased application energy efficiency through outstanding recovery characteristics, prompting a growing number of designers to replace the combination of IGBT+FRD widely used in inverters with PrestoMOS™.

PrestoMOS™

4th Generation PrestoMOS R60xxVNx Series

  Package
TO-252 TO-220FM TO-220AB TO-3PF TO-247
VDS
(V)
Ron typ
(mΩ)
Vgs=15V
trr typ
(ns)
TO-252 TO-220FM TO-220AB To-3PF TO-247
600 250 65 R6013VND3 R6013VNX      
170 68   R6018VNX      
127 80   R6024VNX R6024VNX3    
95 92   R6035VNX R6035VNX3    
59 112   R6055VNX R6055VNX3 R6055VNZ R6055VNZ4
42 125       R6077VNZ R6077VNZ4
22 167         R60A4VNZ4

Recommended Applications

  • Motor drive
  • Energy-saving white goods
  • Charging stations
  • Solar power conditioners
  • Various power supply circuits (LLC/Totem Pole PFC/Full-Bridge)
Recommended Applications

Industry-Leading Recovery Characteristics

ROHM’s PrestoMOS™ series utilizes original patented technology to accelerate the parasitic diode, achieving the industry’s fastest reverse recovery time (trr) - a key characteristic. Normally, this characteristic would be lost as a result of generational scaling due to increased miniaturization, but ROHM’s R60xxVNx series of 4th Gen PrestoMOS™ improves on the basic performance such as ON resistance while maintaining the industry's fastest trr through an optimized structure. Faster trr translates to reduced switching loss in motor and inverter circuits. Double pulse testing is widely used as a method to check these losses. (Please refer to the application note for more information on double pulse testing) Double-pulse tests confirmed the turn-ON switching loss of a single pulse, with the results shown in the figure below. ROHM’s R60xxVNx PrestoMOS™ series was proven to have lower losses than competitor and even ROHM’s existing products. The following figure shows the actual efficiency when ROHM’s R60xxVNx series of PrestoMOS™ is used in a synchronous rectification boost circuit. Similar to the loss relationship verified through double pulse testing above, the results of the actual equipment evaluation show that the R60xxVNx series delivers the lowest loss with the highest efficiency.

  • ■Results of Switching Loss via Double-Pulse Testing

    Results of Switching Loss via Double-Pulse Testing
    *All products used for switching comparison are in the 100mΩ ON-resistance class, with switching loss during turn ON checked at a drain current of 15A and varying gate resistance. The horizontal axis shows the turn ON current change value dif/dt corresponding to each gate resistance.
  • ■Efficiency Comparison Results Using a Synchronous Rectification Boost Circuit

    Efficiency Comparison Results Using a Synchronous Rectification Boost Circuit
    *All products used for comparison are 60mΩ class ON resistance products, with measurements performed under the following conditions: 25℃ ambient temperature, 220V input voltage, 400V output voltage, L=500μH, 70kHz frequency, VDS overshoot at Turn OFF.

The performance of the super junction structure, which is capable of achieving high withstand voltage and low ON resistance, can be further improved by reducing its size. Structural miniaturizatioin improves current density, resulting in 35% lower Ron・A and 30% lower Ron・Qgs compared with the conventional product (R60xxKNx). This allows for lower switching losses at the same ON resistance as conventional products, contributing to further application energy savings.

  • Even faster than conventional high-speed switching products

4th Gen Super Junction MOSFET R60xxYNx Series

  Package
TO-252 TO-220FM TO-220AB TO-3PF TO-247 TOLL
VDS
(V)
Ron typ
(mΩ)
Vgs=15V
TO-252 TO-220FM TO-220AB TO-247 To-3PF TOLL
600 324 R6010YND3 R6010YNX NEWR6010YNX3      
215 NEWR6014YND3 NEWR6014YNX NEWR6014YNX3      
154   NEWR6020YNX NEWR6020YNX3   NEWR6020YNZ4 R6020YNJ2
137   NEWR6022YNX NEWR6022YNX3   NEWR6022YNZ4 R6022YNJ2
112   NEWR6027YNX NEWR6027YNX3   NEWR6027YNZ4 R6027YNJ2
80   R6038YNX NEWR6038YNX3   NEWR6038YNZ4 R6038YNJ2
68   NEWR6049YNX NEWR6049YNX3   NEWR6049YNZ4 R6049YNJ2
57           R6055YNJ2
50   NEWR6061YNX R6061YNX3   NEWR6061YNZ4  
36       NEWR6086YNZ NEWR6086YNZ4  
21         R60A4YNZ4  

Recommended Applications

・TVs
・ Servers
・ UPS
・ Solar Power Conditioners
・ LED Lighting
・ Various Power Supply Circuits [Boost PFC (BCM, CCM) / 3-Phase Vienna PFC]

Recommended Applications

Class-Leading Switching Speed

Class-leading switching speed is achieved through greater miniaturization and structural optimization. This makes it possible to contribute to greater efficiency in hard-switching type circuits such as continuous current mode PFC. What's more, the advantage provided over switching products does not change even when adjusting the gate resistance for thermal and noise designs.

■Switching Loss of a Single Product

  • Switching Loss of a Single Product
  • ・Measurement Circuit

    Measurement Circuit
    *50mΩ products used for comparison at a drain current of 10A, the gate resistance at turn OFF is fixed at 5Ω and the switching loss is checked when the gate resistance at turn ON is changed.

Broader lineup vs conventional

We can now offer a lineup of products with lower ON resistance and higher current than conventional products in each package. What’s more, the addition of TO220AB and TOLL to the lineup allows us to meet a wider range of customer needs.

  • ■Minimum ON Resistance Updated for Each Package

    Minimum ON Resistance Updated for Each Package
  • ■TOLL package added to the lineup

    TOLL package added to the lineup

Low Noise/High-Speed Switching Specifications

ROHM offers 2 types of super junction MOSFETs, a low noise type (R6xxxENx series) and a high-speed switching model (R6xxxKNx series), available in various package types in both 600V and 650V withstand voltages.
The R6xxxENx series places an emphasis on ease-of-use, and achieves superior performance in noise-sensitive applications.
The R6xxxKNx series is focused on high efficiency and delivers excellent performance in applications demanding high-speed switching.
Both the R6xxxENx and R6xxxKNx series are offered in the same ON resistances, making it possible to select the ideal model based on set needs.
An 800V product is also available for high-speed switching specifications, achieving the industry's highest level of performance.

Low Noise Specifications: R60xxENx/R65xxENx Series

The R6xxxENx series are low-noise products that place an emphasis on ease-of-use.
As a reaction to superior ON resistance and switching performance over conventional planar MOSFETs, super junction MOSFETs typically suffer from degraded noise characteristics. However, the R6xxxENx series utilize an optimized internal gate construction that achieves lower noise, resulting in minimal noise-induced loss.
This makes them ideal for applications seeking to reduce noise, such as audio and lighting equipment.
In addition, they provide a level of noise performance equivalent to conventional planar types, making replacement easy.

Low Noise Specifications: R60xxENx/R65xxENx Series
VDS=600V Package
New
SOT-223-3
TO252 LPTS TO220FM TO3PF TO247
SOT-223-3 TO252 LPTS TO220FM TO3PF TO247
Ron typ
(mΩ)
2800   R6002END3        
900 NEWR6004END4  R6004END3 R6004ENJ R6004ENX    
570   R6007END3 R6007ENJ R6007ENX    
500   R6009END3 R6009ENJ R6009ENX    
340   R6011END3 R6011ENJ R6011ENX    
260     R6015ENJ R6015ENX R6015ENZ  
170     R6020ENJ R6020ENX R6020ENZ R6020ENZ4
150     R6024ENJ R6024ENX R6024ENZ R6024ENZ4
115       R6030ENX R6030ENZ R6030ENZ4
92         R6035ENZ R6035ENZ4
66           R6047ENZ4
38           R6076ENZ4
VDS=650V Package
TO252 LPTS TO220FM TO3PF TO247
TO252 LPTS TO220FM TO3PF TO247
Ron typ
(mΩ)
3000 R6502END3        
955 R6504END3 R6504ENJ R6504ENX    
605 R6507END3 R6507ENJ R6507ENX    
530 R6509END3 R6509ENJ R6509ENX    
360 R6511END3 R6511ENJ R6511ENX    
280   R6515ENJ R6515ENX R6515ENZ  
185   R6520ENJ R6520ENX R6520ENZ R6520ENZ4
160   R6524ENJ R6524ENX R6524ENZ R6524ENZ4
125     R6530ENX R6530ENZ R6530ENZ4
98       R6535ENZ R6535ENZ4
70         R6547ENZ4
40         R6576ENZ4

☆:Under Development

High-Speed Switching Specifications: R60xxKNx/R65xxKNx/R80xxKNx Series

The R6xxxKNx series are high-speed switching products that place an emphasis on high efficiency. Optimizing the internal MOSFET structure based on the low-noise R6xxxENx series improves the gate charge characteristics (which is affected by switching speed).
This makes it possible to achieve higher efficiency via high-speed switching without sacrificing the ease-of-use provided by the R6xxxENx series, contributing to higher efficiency in PFC and LLC circuits.
An 800V product is also available for high-speed switching specifications, achieving the industry's highest level of performance.

High-Speed Switching Specifications: R60xxKNx/R65xxKNx/R80xxKNx Series
VDS=600V Package
New
SOT-223-3
TO252 LPTS TO220FM TO3PF TO247
SOT-223-3 TO252 LPTS TO220FM TO3PF TO247
Ron typ
(mΩ)
1300 NEWR6003KND4 R6003KND3        
900   R6004KND3 R6004KNJ R6004KNX    
720 NEWR6006KND4 R6006KND3 R6006KNJ R6006KNX    
570   R6007KND3 R6007KNJ R6007KNX    
500   R6009KND3 R6009KNJ R6009KNX    
340   R6011KND3 R6011KNJ R6011KNX    
260     R6015KNJ R6015KNX R6015KNZ  
170     R6020KNJ R6020KNX R6020KNZ R6020KNZ4
150     R6024KNJ R6024KNX R6024KNZ R6024KNZ4
115       R6030KNX R6030KNZ R6030KNZ4
92         R6035KNZ R6035KNZ4
66           R6047KNZ4
38           R6076KNZ4

☆:Under Development

VDS=650V Package
TO252 LPTS TO220FM TO3PF TO247
TO252 LPTS TO220FM TO3PF TO247
Ron typ
(mΩ)
1400 R6503KND3        
955 R6504KND3 R6504KNJ R6504KNX    
605 R6507KND3 R6507KNJ R6507KNX    
530 R6509KND3 R6509KNJ R6509KNX    
360 R6511KND3 R6511KNJ R6511KNX    
280   R6515KNJ R6515KNX R6515KNZ  
185   R6520KNJ R6520KNX R6520KNZ R6520KNZ4
160   R6524KNJ R6524KNX R6524KNZ R6524KNZ4
125     R6530KNX R6530KNZ R6530KNZ4
98       R6535KNZ R6535KNZ4
70         R6547KNZ4
40         R6576KNZ4

☆:Under Development

VDS=800V Package
TO252 TO220FM TO247
TO252 TO220FM TO247
Ron typ
(mΩ)
7200 R8001KND3    
3500 NEWR8002KND3 NEWR8002KNX  
1500 NEWR8003KND3 NEWR8003KNX  
750 NEWR8006KND3 NEWR8006KNX  
500   NEWR8009KNX  
370   NEWR8011KNX R8011KNZ4
200   NEWR8019KNX R8019KNZ4
80     R8052KNZ4

☆:Under Development

3rd Generation PrestoMOS™: R60xxJNx Series

  Package
New
SOT-223-3
TO252 LPTS TO220FM TO3PFF TO247
SOT-223-3 TO252 LPTS TO220FM TO3PF TO247
Ron typ
(mΩ)
2500 NEWR6002JND4          
1600 NEWR6003JND4          
1100   R6004JND3 R6004JNJ R6004JNX    
720   R6006JND3 R6006JNJ R6006JNX    
600   R6007JND3 R6007JNJ R6007JNX    
450   R6009JND3 R6009JNJ R6009JNX    
350     R6012JNJ R6012JNX    
220     R6018JNJ R6018JNX    
180     R6020JNJ R6020JNX R6020JNZ R6020JNZ4
140       R6025JNX R6025JNZ R6025JNZ4
110       R6030JNX R6030JNZ R6030JNZ4
90           R6042JNZ4
          R6050JNZ R6050JNZ4
45           R6070JNZ4

Feature ① Industry-leading recovery characteristics

ROHM’s PrestoMOS™ series utilizes original patented technology to accelerate the parasitic diode, achieving the industry’s fastest reverse recovery time (trr) - a key characteristic. However, faster diode speeds typically generates steep changes in the current, which tends to increase oscillation.
For our 3rd Generation PrestoMOS™ (R60xxJNx Series), structural optimization makes oscillation difficult during recovery. This facilitates the design and implementation of countermeasures by the customer against oscillation, making them ideal for applications experiencing oscillation during recovery.

Feature ① Industry-leading recovery characteristics

Feature ② Pursuing greater ease-of-use

ROHM’s PrestoMOS™ series is designed for bridge-type circuits and motor inverters requiring high short-circuit breakdown tolerance and self turn-ON prevention. Low short-circuit breakdown tolerance increases the possibility of MOSFET breakdown, while the occurrence of self turn ON can lead to significant power loss.
The R60xxJNx series of 3rd Generation PrestoMOS™ feature an optimized internal structure that makes it possible to clear both of these issues.
Compared to the latest competitor products, class-leading short-circuit breakdown tolerance is achieved, providing a greater level of safety. In addition, self turn ON prevention is ensured, minimizing operating power loss.

Feature ② Pursuing greater ease-of-use

3rd Generation PrestoMOS™: R60xxRNx Series

Part No. Data
Sheet
Polarity
[ch]
VDSS
[V]
ID
[A]
PD
[W]
*TC=25°C
RDS(on) (Typ.)
[mΩ]
*VGS=15V
Qg (Typ.)
[nC]
*VGS=15V
trr (Typ.)
[ns]
Package
NewR6004RND3 PDF N 600 4 60 1,330 10.5 40 TO-252
TO-252
<DPAK>
NewR6007RND3 PDF 7 96 730 17.5 50
NewR6009RND3 PDF 9 126 510 22.5 55

Feature Fastest Reverse Recovery Time Characteristics, Achieving Lower Power Consumption

An industry-best trr of 40ns is achieved by improving conventional lifetime control technology, reducing switching losses by approx. 30% over general products that translates to lower application power loss.
At the same time, the newly developed Super Junction structure reduces noise characteristics (which are inversely related to faster trr) by about 15dB compared to standard products (under ROHM measurement conditions at 40MHz).

*ROHM July 13th, 2023 study

New R60xxRNx Series Features
Application Advantages of the New R60xxRNx Series